V20202G_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V20202G, VF20202G, VB20202G, VI20202G
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
22
20
18
16
14
12
10
8
6
4
2
0
0
Rth_JA=Rth_JC
V(B,I)20202G
VF20202G
T_A , Rth_JA
25 50 75 100 125 150 175
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
100 000
10 000
1000
100
T_A = 175 °C
TA = 150 °C
TA = 125 °C
TA = 100 °C
10
1
T_A = 25 °C
0.1
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
9
D = 0.8
8
D = 0.5
7
D = 0.3
6
D = 0.2
D = 1.0
5
D = 0.1
4
3
T
2
1
D = t_p/T t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
1000
100
T_J = 25 °C
f = 1 MHz
V_sig = 50 mV_p-p
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
T_A = 175 °C
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
T_A = 25 °C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
Junction to Case
1
V(B,I)20202G
VF20202G
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 31-Oct-14
3
Document Number: 87798
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