V20202G_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V20202G, VF20202G, VB20202G, VI20202G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
I_F = 5 A
T_A = 25 °C
Instantaneous forward voltage per diode ^{(1) IF = 10 A}
V_F
I_F = 5 A
T_A = 125 °C
I_F = 10 A
Reverse current per diode ⁽²⁾
T_A = 25 °C
V_R = 160 V
T_A = 125 °C
I_R
T_A = 25 °C
V_R = 200 V
T_A = 125 °C
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
TYP.
0.76
0.84
0.61
0.71
0.3
0.5
-
1.5
MAX.
-
0.92
-
0.8
-
-
150
8
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20202G VF20202G VB20202G VI20202G
Typical thermal resistance
per diode
R_JC
2.8
5.0
2.8
per device
R_JC
1.6
3.5
1.6
per device
R_JA ⁽¹⁾⁽²⁾
52
60
52
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20202G-M3/4W
1.88
ITO-220AB
VF20202G-M3/4W
1.75
TO-263AB
VB20202G-M3/4W
1.39
TO-263AB
VB20202G-M3/8W
1.39
TO-262AA
VI20202G-M3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Revision: 31-Oct-14
2
Document Number: 87798
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000