V20202G_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V20202G, VF20202G, VB20202G, VI20202G
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.61 V at I_F = 5 A
TO-220AB
TMBS ^®
ITO-220AB
V20202G
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF20202G
123
PIN 1
PIN 2
PIN 3
TO-263AB
K
TO-262AA
K
FEATURES
• Trench MOS Schottky technology generation 2
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
2
1
VB20202G
PIN 1
K
PIN 2
HEATSINK
3
2
1
VI20202G
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 10 A
V_RRM
200 V
I_FSM
130 A
V_F at I_F = 10 A (T_A = 125 °C)
0.71 V
T_J max.
Package
175 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
V_RRM
per device
Maximum average forward rectified current (fig. 1)
per diode
I_F(AV)
Maximum DC reverse voltage
V_DC
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AB only) 
from terminal to heatsink, t = 1 min
dV/dt
V_AC
Operating junction and storage temperature range
T_J, T_STG
V20202G
VF20202G VB20202G
200
20
10
160
VI20202G
130
10 000
1500
-40 to +175
UNIT
V
A
V
A
V/μs
V
°C
Revision: 31-Oct-14
1
Document Number: 87798
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000