V10150C_09 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V10150C, VF10150C, VB10150C & VI10150C
Vishay General Semiconductor
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
T_A = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10
1
0.1
0.01
T_A = 150 °C
T_A = 125 °C
T_A = 100 °C
0.001
0.0001
T_A = 25 °C
0.00001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.01
V(B,I)10150C
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.01
VF10150C
0.1
1
10
100
t - Pulse Duration (s)
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 89068
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
[e-mail], [e-mail], [e-mail]
www.vishay.com
3