V10150C_09 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V10150C, VF10150C, VB10150C & VI10150C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
I_R = 1.0 mA T_A = 25 °C
V_BR
150 (minimum)
I_F = 3 A
Instantaneous forward voltage per diode ^{(1) IF = 5 A}
T_A = 25 °C
V_F
0.82
0.99
I_F = 3 A
I_F = 5 A
T_A = 125 °C
0.63
0.69
Reverse current per diode ⁽²⁾
V_R = 100 V
T_A = 25 °C
T_A = 125 °C
0.5
0.5
V_R = 150 V
T_A = 25 °C
T_A = 125 °C
I_R
-
1.0
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
MAX.
-
-
1.41
-
0.75
-
-
100
10
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10150C
VF10150C
Typical thermal resistance per diode
R_θJC
4.0
6.5
VB10150C
4.0
VI10150C
4.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V10150C-E3/4W
1.87
ITO-220AB
VF10150C-E3/4W
1.74
TO-263AB
VB10150C-E3/4W
1.39
TO-263AB
VB10150C-E3/8W
1.38
TO-262AA
VI10150C-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
V(B,I)10150C
8
VF10150C
6
4
2
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
5
D = 0.8
D = 0.5
4
D = 0.3
D = 0.2
3
D = 0.1
2
D = 1.0
T
1
D = t_p/T
t_p
0
0
1
2
3
4
5
6
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
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Document Number: 89068
Revision: 24-Jun-09