V10150C_09 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V10150C, VF10150C, VB10150C & VI10150C
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.63 V at I_F = 3 A
TO-220AB
TMBS ^®
ITO-220AB
V10150C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF10150C
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB10150C
PIN 1
K
PIN 2
HEATSINK
3
2
1
VI10150C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 5 A
T_J max.
2 x 5.0 A
150 V
60 A
0.69 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V10150C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Non-repetitive avalanche energy
at T_J = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t_p = 2 µs, 1 kHz,
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
E_AS
I_RRM
dV/dt
V_AC
Operating junction and storage temperature range
T_J, T_STG
VF10150C VB10150C
150
10
5.0
60
23
0.5
10 000
1500
- 55 to + 150
VI10150C
UNIT
V
A
A
mJ
A
V/µs
V
°C
Document Number: 89068
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
[e-mail], [e-mail], [e-mail]
www.vishay.com
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