UH10JT Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Voltage Ultrafast Rectifier

New Product
UH10JT & UHF10JT
Vishay General Semiconductor
100
T_A = 175 °C
10
T_A = 125 °C
1
T_A = 25 °C
0.1
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
T_A = 175 °C
T_A = 125 °C
1
0.1
T_A = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
Junction to Case
1
UH10JT
0.1
0.001
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
10
Junction to Case
1
UHF10JT
0.1
0.001
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 7. Typical Transient Thermal Impedance
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Document Number: 88998 For technical questions within your region, please contact one of the following:
Revision: 25-Aug-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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