UH10JT Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Voltage Ultrafast Rectifier

UH10JT & UHF10JT
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Reverse current ⁽²⁾
V_R = 600 V
T_A = 25 °C
T_A = 125 °C
I_R
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
Maximum reverse recovery time
t_rr
I_F = 1.0 A, dI/dt = 50 A/µs,
V_R = 30 V, I_rr = 0.1 I_RM
Typical softness factor (t_b/t_a)
S
Typical reverse recovery c urrent
I_F = 10 A, dI/dt = 200 A/µs,
V_R = 400 V, T_J = 125 °C
I_RM
Typical stored charge
Q_rr
Typical forward recovery time
I_F = 10 A, dI/dt = 80 A/µs,
V_F = 1.1 x V_{F max.}
t_fr
-
27
-
-
0.45
7.5
200
160
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH10JT
Typical thermal resistance from junction to case
R_θJC
2.0
MAX.
10
150
25
45
-
-
-
-
UNIT
µA
ns
-
A
nC
ns
UHF10JT
4.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AC
UH10JT-E3/4W
1.84
ITO-220AC UHF10JT-E3/45
1.73
PACKAGE CODE
4W
45
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
UH10JT
6
UHF10JT
4
2
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 1.0
D = 0.1
T
D = t_p/T
t_p
2
4
6
8
10
12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following: Document Number: 88998
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Revision: 25-Aug-08