UG30APT-E3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Ultrafast recovery time

UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
36
Resistive or Inductive Load
30
24
18
12
6
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Max. Forward Current Derating Curve
1000
100
T_J = 100 °C
10
T_J = 25 °C
1
0.1
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
1000
100
T_C = 120 °C
8.3 ms Single Half Sine-Wave
10
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode
60
I_F = 15 A
V_R = 30 V
50
40
30
20
dI/dt = 150 A/µs
dI/dt = 20 A/µs
dI/dt = 100 A/µs
dI/dt = 50 A/µs
dI/dt = 100 A/µs
dI/dt = 150 A/µs
dI/dt = 50 A/µs
dI/dt = 20 A/µs
10
0
0
25 50 75 100 125 150 175
Junction Temperature (°C)
Fig. 5 - Reverse Switching Characteristics Per Diode
100
100
10
T_J = 25 °C
1
Pulse Width = 300 µs
1 % Duty Cycle
10
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

T_J = 125 °C
f = 1.0 MHz
V_sig = 50 mVp-p
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 24-Feb-16
3
Document Number: 88762
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