UG30APT-E3 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Ultrafast recovery time

UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT
Max. instantaneous forward
voltage per diode
15 A
30 A
10 A
T_J = 100 °C
V_F
1.0
1.15
V
0.85
Max. DC reverse current at rated
DC blocking voltage per diode
T_A = 25 °C
I_R
T_A = 100 °C
Max. reverse recovery time
I_F = 0.5 A, I_R = 1.0 A, 
I_rr = 0.25 A
t_rr
Max. reverse recovery time
I_F = 15 A, V_R = 30 V, T_J = 25 °C
dI/dt = 50 A/μs,
t_rr
I_RR = 10 % I_RM
T_J = 100 °C
I_F = 15 A, V_R = 30 V, T_J = 25 °C
Max. recovered stored charge dI/dt = 50 A/μs,
Q_rr
I_RR = 10 % I_RM
T_J = 100 °C
Typical junction capacitance
4.0 V, 1 MHz
C_J
15
μA
800
25
ns
35
ns
50
22
nC
50
70
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT
Typical thermal resistance per diode ⁽¹⁾
R_JC
2.0
°C/W
Note
(1) _{Thermal resistance from junction to case per diode mounted on heatsink}
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-247AD
UG30DPT-E3/45
6.15
PACKAGE CODE
30
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
Revision: 24-Feb-16
2
Document Number: 88762
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