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SUR70N02-04P Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175C MOSFET
New Product
SUR70N02-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
120
TC = −55_C
100
25_C
80
125_C
60
40
0.007
0.006
0.005
0.004
0.003
0.002
20
0.001
0
0
6000
10
20
30
40
50
ID − Drain Current (A)
Capacitance
0.000
0
10
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
20
40
60
80
100
ID − Drain Current (A)
Gate Charge
5000
4000
3000
2000
Crss
1000
Ciss
Coss
8
VDS = 10 V
ID = 50 A
6
4
2
0
0
4
8
12
16
20
VDS − Drain-to-Source Voltage (V)
0
0
15
30
45
60
75
Qg − Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 30 A
1.4
1.2
1.0
Source-Drain Diode Forward Voltage
100
TJ = 150_C
10
TJ = 25_C
0.8
0.6
−50 −25
0 25 50 75 100 125 150 175
TJ − Junction Temperature (_C)
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
1
0
0.3
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
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