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SUR70N02-04P Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175C MOSFET
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SUR70N02-04P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 50 A
VDD = 10 V, RL = 0.2 W
ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
IF = 50 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
20
V
0.8
3.0
"100
nA
1
50
mA
50
A
0.0028 0.0037
0.0052
W
0.0047 0.0061
15
S
4500
1520
pF
800
0.5
1.1
1.8
W
34
153
11
nC
10
15
25
11
20
35
55
ns
15
25
100
A
1.2
1.5
V
45
90
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160
Transfer Characteristics
140
140
120
100
80
60
40
20
0
0
VGS = 10 thru 4 V
3V
2V
2
4
6
8
10
VDS − Drain-to-Source Voltage (V)
120
100
80
60
40
TC = 125_C
20
25_C
−55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS − Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
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