SUR70N02-04P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175C MOSFET

New Product
SUR70N02-04P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.0037 @ V_GS = 10 V
0.0061 @ V_GS = 4.5 V
TO-252
Reverse Lead DPAK
I_D (A)^a
37
29
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% R_g Tested
APPLICATIONS
D Synchronous Buck Converter
− Low Side
D Synchronous Rectifier
− Secondary Rectifier
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUR70N02-04P—E3
SUR70N02-04P-T4—E3 (altrenate tape orientation)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_C= 25_C
L = 0.1 mH
T_A = 25_C
T_C = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
20
"20
37^a
70^b
100
37
30
45
8.3^a
93
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
1.3
Maximum
18
50
1.6
Unit
_C/W
www.vishay.com
1