SUR50N03-16P Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
SUR50N03-16P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
60
0.05
T_C = −55_C
50
0.04
25_C
40
125_C
0.03
30
0.02
20
10
0.01
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
0
0
1500
1200
5
10
15
20
25
30
I_D − Drain Current (A)
Capacitance
C_iss
0.00
0
10
10
20
30
40
50
60
I_D − Drain Current (A)
Gate Charge
8
V_DS = 15 V
I_D = 50 A
900
6
600
300
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.1
V_GS = 10 V
I_D = 15 A
1.8
4
2
0
0
3
6
9
12
15
18
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
1.5
T_J = 150_C
T_J = 25_C
10
1.2
0.9
0.6
−50 −25
0 25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
1
0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
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