SUR50N03-16P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
SUR50N03-16P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.016 @ V_GS = 10 V
0.024 @ V_GS = 4.5 V
TO-252
Reverse Lead DPAK
I_D (A)^a
15
12
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
D 100% R_g Tested
APPLICATIONS
D DC/DC Converters
− High-Side
D Synchronous Rectifiers
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUR50N03-16P—E3
SUR50N03-16P-T4—E3 (altrenate tape orientation)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_A = 25_C
T_A = 100_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
30
"20
36
15
10.6
40
5
25
31.25
40.8
6.5^a
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
18
40
3.0
Maximum
23
50
3.7
Unit
_C/W
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