SUR50N03-16P Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SUR50N03-16P
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 125_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 15 A
V_GS = 10 V, I_D = 20 A, T_J = 125_C
V_GS = 4.5 V, I_D = 10 A
V_DS = 15 V, I_D = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Gate Resistance
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 15 V, V_GS = 4.5 V, I_D = 50 A
V_DD = 15 V, R_L = 0.3 W
I_D ^ 50 A, V_GEN = 10 V, R_g = 2.5 W
Source-Drain Diode Ratings and Characteristic (T_C = 25_C)
Pulsed Current
I_SM
Diode Forward Voltage^b
V_SD
Source-Drain Reverse Recovery Time
t_rr
I_F = 20 A, V_GS = 0 V
I_F = 40 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typ^a Max Unit
30
V
1.0
3.0
"100
nA
1
50
mA
40
A
0.0128 0.016
0.025
W
0.019
0.024
10
S
1150
215
pF
70
8.5
13
5
nC
2.5
2.7
5.5
9.40
W
7
15
20
30
25
40
ns
12
20
40
A
1.0
1.5
V
25
70
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
60
V_GS = 10 thru 5 V
50
50
40
40
4V
30
30
20
20
10
0
0
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2
3V
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
10
0
0
Transfer Characteristics
T_C = 125_C
25_C
−55_C
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
Document Number: 72775
S-32696—Rev. A, 19-Jan-04