SUM60P05-11LT Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 55-V (D-S) MOSFET with Sensing Diode

SUM60P05-11LT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
V_GS = 10 thru 6 V
160
120
5V
Transfer Characteristics
250
T_C = –55_C
200
25_C
150
125_C
80
40
0
0
4V
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
100
50
0
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V_GS – Gate-to-Source Voltage (V)
Transconductance
100
T_C = –55_C
80
25_C
125_C
60
0.030
On-Resistance vs. Drain Current
0.024
0.018
V_GS = 4.5 V
40
0.012
V_GS = 10 V
20
0.006
0
0
8000
6000
20
40
60
80
100 120
V_GS – Gate-to-Source Voltage (V)
Capacitance
C_iss
4000
2000
C_oss
C_rss
0
0
11
22
33
44
55
V_DS – Drain-to-Source Voltage (V)
Document Number: 71748
S-05060—Rev. A, 12-Nov-01
0.000
0
20
20
40
60
80
100 120
I_D – Drain Current (A)
Gate Charge
16
V_GS = 30 V
I_D = 50 A
12
8
4
0
0
50
100
150
200
Q_g – Total Gate Charge (nC)
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