SUM60P05-11LT Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 55-V (D-S) MOSFET with Sensing Diode

SUM60P05-11LT
Vishay Siliconix
P-Channel 55-V (D-S) MOSFET with Sensing Diode
PRODUCT SUMMARY
V_(BR)DSS (V)
–55
r_DS(on) (W)
0.011 @ V_GS = –10 V
0.0175 @ V_GS = –4.5 V
I_D (A)
–60^a
–60^a
D²PAK-5L
FEATURES
D TrenchFETr Power MOSFETS Plus
Temperature Sensing Diode
D 175_C Junction Temperature
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive
S ^{D Industrial}
G
12345
T₁
D₁
D₂
T₂
G DS
T₁
T₂
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^d
Pulsed Drain Current
Continous Diode Current (Diode Conduction)^d
Avalanche Current
Repetitive Avalanche Energy^b
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AR
E_AR
P_D
T_J, T_stg
–55
"20
–60^a
–60^a
–250
–60^a
–60^a
180
200^c
3.75^d
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71748
S-05060—Rev. A, 12-Nov-01
PCB Mount^d
Symbol
R_thJA
R_thJC
Limit
40
0.75
Unit
_C/W
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