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SUM60P05-11LT Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 55-V (D-S) MOSFET with Sensing Diode
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SUM60P05-11LT
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Sense Diode Forward Voltage
Sense Diode Forward Voltage Increase
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
VFD
DVF
gfs
VGS = 0 V, ID = –250 mA
VDS = VGS, IDS = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –44 V, VGS = 0 V
VDS = –44 V, VGS = 0 V, TJ = 175_C
VDS = –5 V, VGS = –10 V
VGS = –10 V, ID = –30 A
VGS = –10 V, ID = –30 A, TJ = 125_C
VGS = –10 V, ID = –30 A, TJ = 175_C
VGS = –4.5 V, ID = –20 A
VDS = –25 V, IF = –250 mA
From IF = –125 mA to IF = –250 mA
VDS = –25 V, ID = –30 A
–55
–1
–120
–770
–25
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = –25 V, f = 1 MHz
VDS = –30 V, VGS = –10 V, ID = –60 A
VDD = –30 V, RL = 0.6 W
ID ] –60 A, VGEN = –10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = –60 A, VGS = 0 V
IF = –60 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Typ Max Unit
V
"100
nA
–1
mA
–250
A
0.009 0.011
0.0175
W
0.022
0.0175
–830
mV
–55
50
S
6450
160
1050
pF
520
107
28
nC
22
15
25
190
325
ns
145
220
265
450
–60
A
–200
–1.1
–1.5
V
55
110
ns
–1.6
–2.0
A
0.04
12
mC
www.vishay.com
2
Document Number: 71748
S-05060—Rev. A, 12-Nov-01
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