SUM60N04-05LT Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET with Sensing Diode

SUM60N04-05LT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
250
V_GS = 10 thru 6 V
200
5V
200
Transfer Characteristics
150
150
100
50
0
0
200
160
120
4V
3V
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
Transconductance
T_C = −55_C
25_C
125_C
80
40
100
T_C = 125_C
50
25_C
−55_C
0
0
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
0.015
On-Resistance vs. Drain Current
0.012
0.009
0.006
0.003
V_GS = 4.5 V
V_GS = 10 V
0
0
10000
20
40
60
80
100 120
V_GS − Gate-to-Source Voltage (V)
Capacitance
8000
C_iss
6000
0.000
0
20
20
40
60
80
100 120
I_D − Drain Current (A)
Gate Charge
16
V_GS = 20 V
I_D = 25 A
12
4000
2000
C_oss
C_rss
0
0
8
16
24
32
40
V_DS − Drain-to-Source Voltage (V)
Document Number: 71747
S-40862—Rev. C, 03-May-04
8
4
0
0
40
80
120 160 200 240
Q_g − Total Gate Charge (nC)
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