SUM60N04-05LT Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET with Sensing Diode

SUM60N04-05LT
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET with Sensing Diode
PRODUCT SUMMARY
V_(BR)DSS (V)
40
r_DS(on) (W)
0.0045 @ V_GS = 10 V
0.0065 @ V_GS = 4.5 V
D²PAK-5L
I_D (A)
60^a
20^a
FEATURES
D TrenchFETr Power MOSFETS Plus
Temperature Sensing Diode
D 175_C Junction Temperature
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive
D D Industrial
G
12345
T₁
D₁
D₂
T₂
G DS
T₁
T₂
Ordering Information: SUM60N04-05LT
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^d
Pulsed Drain Current
Continous Diode Current (Diode Conduction)^d
Avalanche Current
Repetitive Avalanche Energy^b
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AR
E_AR
P_D
T_J, T_stg
40
"20
60^a
60^a
250
60^a
60^a
180
200^c
3.75^d
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient^d
Junction-to-Case
Parameter
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71747
S-40862—Rev. C, 03-May-04
PCB Mount^d
Symbol
R_thJA
R_thJC
Limit
40
0.75
Unit
_C/W
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