English
Language : 

SUM60N04-05LT Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET with Sensing Diode
◁
SUM60N04-05LT
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Gate Threshold Voltage
VGS(th)
VDS = VGS, IDS = 250 mA
1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
VDS = 40 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V, TJ = 125_C
VDS = 40 V, VGS = 0 V, TJ = 175_C
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 10 V
120
VGS = 10 V, ID = 60 A
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 60 A, TJ = 125_C
VGS = 10 V, ID = 60 A, TJ = 175_C
Sense Diode Forward Voltage
VFD1 and
VFD2
IF = 50 mA
IF = 25 mA
655
600
Sense Diode Forward Voltage Increase
DVF
Forward Transconductancea
gfs
From IF = 25 mA to IF = 50 mA
30
VDS = 15 V, ID = 20 A
Dynamicb
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 25 A
VDD = 20 V, RL = 0.8 W
ID ] 25 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = 60 A, VGS = 0 V
IF = 60 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Typ Max Unit
V
3
"100
nA
1
50
mA
500
A
0.0035 0.0045
0.0051 0.0065
W
0.0069
0.0086
715
660
mV
80
35
S
6000
1100
pF
700
130
25
nC
40
15
20
80
120
ns
100
150
100
150
60
A
200
1.0
1.5
V
60
90
ns
2.1
4
A
0.065 0.18
mC
www.vishay.com
2
Document Number: 71747
S-40862—Rev. C, 03-May-04
 ▷