SUD50N03-12P Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
SUD50N03-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
80
0.05
T_C = - 55_C
0.04
60
25_C
125_C
0.03
40
0.02
20
0.01
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
0
0
2500
2000
1500
10
20
30
40
50
I_D - Drain Current (A)
Capacitance
C_iss
0.00
0
10
20
40
60
80
I_D - Drain Current (A)
Gate Charge
8
V_DS = 15 V
I_D = 50 A
6
1000
4
500
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 15 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
Document Number: 72267
S-31875—Rev. , 15-Sep-03
2
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
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