SUD50N03-12P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
SUD50N03-12P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.012 @ V_GS = 10 V
30
0.0175 @ V_GS = 4.5 V
I_D (A)^a
17.5
14.5
FEATURES
D TrenchFETr Power MOSFET
D
TO-252
GDS
Top View
Order Number:
SUD50N03-12P
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 100_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
30
"20
17.5
12.4
40
5
30
45
46.8
6.5^a
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72267
S-31875—Rev. A, 15-Sep-03
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
18
40
2.6
Maximum
23
50
3.2
Unit
_C/W
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