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SUD50N03-12P Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET
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SUD50N03-12P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 50 A
VDD = 15 V, RL = 0.3 W
ID ^ 50 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
IF = 40 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
80
80
VGS = 10 thru 5 V
60
60
Min Typa Max Unit
30
V
1.0
3.0
"100
nA
1
50
mA
40
A
0.010
0.012
0.017
W
0.0138 0.0175
15
S
1600
285
pF
140
28
42
6.0
nC
5.0
1.5
W
9
15
15
25
20
30
ns
12
20
100
A
1.2
1.5
V
25
70
ns
Transfer Characteristics
40
4V
20
3V
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
www.vishay.com
2
40
20
0
0
TC = 125_C
25_C
- 55_C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Document Number: 72267
S-31875—Rev. , 15-Sep-03
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