SUD50N02-04P_08 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175C MOSFET

SUD50N02-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
160
T_C = −55_C
0.010
0.008
120
T_C = 25_C
T_C = 125_C
0.006
80
0.004
40
0.002
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
0
0
15
30
45
60
I_D - Drain Current (A)
7000
Capacitance
6000
C_iss
5000
4000
3000
2000
C_rss
1000
C_oss
0
0
5
10
15
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 20 A
1.4
1.2
1.0
0.8
0.6
−50 −25
0 25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
Document Number: 72216
S-40272—Rev. B, 23-Feb-04
0.000
0
10
20
40
60
80
100
I_D - Drain Current (A)
Gate Charge
8
V_DS = 10 V
I_D = 50 A
6
4
2
0
0
20
40
60
80
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
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