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SUD50N02-04P_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175C MOSFET
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SUD50N02-04P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 10 V, f = 1 MHz
f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 50 A
VDD = 10 V, RL = 0.2 W
ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
IF = 50 A, VGS = 0 V
IF = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
20
V
0.8
3.0
"100
nA
1
50
mA
50
A
0.0035 0.0043
0.0061
W
0.0048 0.006
15
S
5000
1650
pF
770
1.6
W
40
60
14
nC
13
20
30
20
30
50
75
ns
15
25
100
A
0.9
1.5
V
45
70
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
200
VGS = 10 thru 5 V
160
150
120
4V
100
80
40
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
50
0
0
www.vishay.com
2
Transfer Characteristics
25_C
TC = 125_C
−55_C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Document Number: 72216
S-40272—Rev. B, 23-Feb-04
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