SUD50N02-04P_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175C MOSFET

SUD50N02-04P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0043 @ V_GS = 10 V
20
0.006 @ V_GS = 4.5 V
TO-252
I_D (A)^a
34
28
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
APPLICATIONS
D Synchronous Buck Converter
− Low-Side
− Desktop, Servers, Desknote
D
D Synchronous Rectification
− POL
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD50N02-04P
SUD50N02-04P—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current^c
Avalanche Energy^c
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_C= 25_C
L= 0.1 mH
T_A = 25_C
T_C = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
Eas
P_D
T_J, T_stg
20
"20
34^a
50^b
100
8.3^a
50
125
8.3^a
136
−55 to 175
Unit
V
A
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Single Pulse
Document Number: 72216
S-40272—Rev. B, 23-Feb-04
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
_C/W
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