SUD50M02-12P Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175-LC MOSFET

SUD50N02-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
50
0.040
On-Resistance vs. Drain Current
0.035
40
T_C = - 55_C
0.030
V_GS = 4.5 V
30
25_C
0.025
125_C
0.020
20
0.015
V_GS = 10 V
0.010
10
0.005
0
0
10
20
30
40
50
0.000
0
15
30
45
60
75
90
1500
I_D - Drain Current (A)
Capacitance
I_D - Drain Current (A)
Gate Charge
10
1200
C_iss
8
V_DS = 10 V
I_D = 50 A
900
6
600
4
C_oss
300
C_rss
2
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 30 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
Document Number: 72095
S-31269—Rev. B, 16-Jun-03
0
0
4
8
12
16
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
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