SUD50M02-12P Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175-LC MOSFET

SUD50N02-12P
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 16 V, V_GS = 0 V
V_DS = 16 V, V_GS = 0 V, T_J = 125_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 125_C
V_GS = 4.5 V, I_D = 15 A
V_DS = 15 V, I_D = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
R_G
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 10 V, f = 1 MHz
V_DS = 10 V, V_GS = 4.5 V, I_D = 50 A
V_DD = 10 V, R_L = 0.2 W
I_D ^ 50 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristic (T_C = 25_C)
Pulsed Current
I_SM
Diode Forward Voltage^b
V_SD
Source-Drain Reverse Recovery Time
t_rr
I_F = 50 A, V_GS = 0 V
I_F = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typ^a Max Unit
20
V
0.8
3.0
"100
nA
1
mA
50
50
A
0.0095 0.012
0.0143
W
0.021
0.026
10
S
1000
370
pF
180
3.0
W
7.5
12
3.5
nC
2.6
11
20
10
15
24
35
ns
9
15
100
A
1.1
1.5
V
20
40
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
90
90
6V
75
V_GS = 10 thru 7 V
75
60
5V
60
45
45
Transfer Characteristics
T_C = - 55_C
25_C
125_C
30
4V
30
15
0
0
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2
3V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
15
0
0
1
2
3
4
5
6
7
V_GS - Gate-to-Source Voltage (V)
Document Number: 72095
S-31269—Rev. B, 16-Jun-03