SUD50M02-12P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175-LC MOSFET

SUD50N02-12P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.012 @ V_GS = 10 V
20
0.026 @ V_GS = 4.5 V
TO-252
I_D (A)^a
40^c
27^c
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
- Desktop
D
- Server
GDS
Top View
Order Number:
SUD50N02-12P
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C= 100_C
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
P_D
T_J, T_stg
20
"20
40^c
28^c
90
4
33.3
6^a
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
t v 10 sec
Steady State
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Based on maximum allowable Junction Temperature. Package limitation current is 30 A.
R_thJA
R_thJC
Document Number: 72095
S-31269—Rev. B, 16-Jun-03
Typical
20
40
3.7
Maximum
25
50
4.5
Unit
_C/W
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