SI9803DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel Reduced Qg Fast Switching MOSFET

Si9803DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 5.5 thru 3.5 V
32
32
3V
24
24
16
16
2.5 V
Transfer Characteristics
T_C = –55_C
25_C
125_C
8
0
0
0.15
2V
1.5 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
8
0
0
3000
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.12
0.09
0.06
0.03
V_GS = 3 V
V_GS = 4.5 V
0
0
8
16
24
32
40
I_D – Drain Current (A)
Gate Charge
4.5
4.0
V_DS = 10 V
3.5
I_D = 5.9 A
3.0
2.5
2.0
1.5
1.0
0.5
0
0
4
8
12
16
Q_g – Total Gate Charge (nC)
2500
2000
C_iss
1500
1000
C_oss
500
0
0
C_rss
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.6
V_GS = 4.5 V
I_D = 5.9 A
1.2
0.8
0.4
0
–50
0
50
100
150
T_J – Junction Temperature (_C)
Document Number: 70638
S-49559—Rev. C, 11-Feb-98
www.vishay.com S FaxBack 408-970-5600
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