SI9803DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel Reduced Qg Fast Switching MOSFET

Si9803DY
Vishay Siliconix
P-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.040 @ V_GS = –4.5 V
–25
0.060 @ V_GS = –3.0 V
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
I_D (A)
"5.9
"4.8
SSS
G
DDDD
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–25
"12
"5.9
"4.7
"40
–2.1
2.5
1.6
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient^a
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70638
S-49559—Rev. C, 11-Feb-98
Symbol
R_thJA
Limit
50
Unit
_C/W
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