SI9803DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel Reduced Qg Fast Switching MOSFET

Si9803DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = –25 V, V_GS = 0 V
V_DS = –25 V, V_GS = 0 V, T_J = 70_C
V_DS v–5 V, V_GS = –4.5 V
V_GS = –4.5 V, I_D = –5.9 A
V_GS = –3.0 V, I_D = –4.8 A
V_DS = –9 V, I_D = –5.9 A
I_S = –2.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. For design aid only; not subject to production testing.
V_DS = –10 V, V_GS = –4.5 V, I_D = –5.9 A
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
I_F = –2.6, di/dt = 100 A/ms
Min Typ Max Unit
–0.6
V
"100
nA
–1
mA
–5
–40
A
0.033
0.040
W
0.044
0.060
18
S
–0.75
–1.2
V
15.8
25
3.0
nC
5.4
20
40
30
60
53
100
ns
31
60
80
120
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2
Document Number: 70638
S-49559—Rev. C, 11-Feb-98