SI9433BDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si9433BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
1500
Capacitance
0.12
0.09
1200
C_iss
900
0.06
0.03
V_GS = 2.7 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
6
V_DS = 6 V
5
I_D = 6.2 A
Gate Charge
4
3
2
1
0
0
2
4
6
8
10
12
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
T_J = 150_C
1
T_J = 25_C
600
300
0
0
C_rss
4
C_oss
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 6.2 A
1.4
1.2
1.0
0.8
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.15
0.12
I_D = 6.2 A
0.09
0.06
0.03
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72755
S-40242—Rev. A, 16-Feb-04
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
www.vishay.com
3