SI9433BDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si9433BDY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = −20 V, V_GS = 0 V
V_DS = −20 V, V_GS = 0 V, T_J = 70_C
V_DS v−5 V, V_GS = −4.5 V
V_DS v−5 V, V_GS = −2.7 V
V_GS = −4.5 V, I_D = −6.2 A
V_GS = −2.7 V, I_D = −5.0 A
V_DS = −9 V, I_D = −6.2 A
I_S = −2.6 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
V_DS = −6 V, V_GS = −4.5 V, I_D = −6.2 A
V_DD = −6 V, R_L = 6 W
I_D ^ −1 A, V_GEN = −4.5 V, R_g = 6 W
I_F = −2.3 A, di/dt = 100 A/ms
Min Typ^a Max Unit
−0.6
−1.5
V
"100
nA
−1
mA
−10
−20
A
−5
0.030
0.040
W
0.050
0.060
15
S
−0.76
−1.1
V
8.8
14
1.8
nC
2.4
8.5
W
40
60
55
85
65
100
ns
30
45
35
55
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V_GS = 5 thru 3 V
16
2.5 V
12
8
2V
4
0
0
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
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2
Transfer Characteristics
20
16
12
8
T_C = 125_C
4
25_C
−55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS − Gate-to-Source Voltage (V)
Document Number: 72755
S-40242—Rev. A, 16-Feb-04