SI9433BDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si9433BDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
−20
r_DS(on) (W)
0.040 @ V_GS = −4.5 V
0.060 @ V_GS = −2.7 V
I_D (A)
−6.2
−5.0
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si9433BDY—E3 (Lead Free)
Si9433BDY-T1—E3 (Lead Free with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"12
−6.2
−4.5
−5.0
−3.5
−20
−2.3
−1.2
2.5
1.3
1.6
0.8
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72755
S-40242—Rev. A, 16-Feb-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
45
80
20
Maximum
50
95
24
Unit
_C/W
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