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SI8405DB Datasheet, PDF (3/5 Pages) Vishay Siliconix – 12-V P-Channel 1.8-V (G-S) MOSFET
Si8405DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.14
2000
Capacitance
0.12
0.10
0.08
0.06
0.04
0.02
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
1600
1200
800
400
Ciss
Crss
Coss
0.00
0
2
4
6
8
ID - Drain Current (A)
0
0
2
4
6
8
10
12
VDS - Drain-to-Source Voltage (V)
Gate Charge
6
5
VDS = 6 V
ID = 1 A
4
3
2
1
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
1.4
ID = 1 A
1.2
1.0
0.8
0
0
4
8
12
16
20
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.30
TJ = 150_C
1
TJ = 25_C
0.24
0.18
0.12
0.06
ID = 1 A
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Document Number: 71814
S-20804—Rev. C, 01-Jul-02
0.00
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
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