SI8405DB Datasheet, PDF (2/5 Pages) Vishay Siliconix – 12-V P-Channel 1.8-V (G-S) MOSFET

Si8405DB
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 12 V, V_GS = 0 V
V_DS = - 12 V, V_GS = 0 V, T_J = 70_C
V_DS v - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 1 A
V_GS = - 2.5 V, I_D = - 1 A
V_GS = - 1.8 V, I_D = - 1 A
V_DS = - 10 V, I_D = - 1 A
I_S = - 1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 6 V, V_GS = - 4.5 V, I_D = - 1 A
V_DD = - 6 V, R_L = 6 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - A, di/dt = 100 A/ms
Min
Typ
Max Unit
- 0.45
- 0.7
- 0.95
V
"100
nA
-1
mA
-5
-5
A
0.045
0.055
0.055
0.070
W
0.073
0.090
6
S
- 0.73
- 1.1
V
14
21
1.7
nC
2.5
16
25
32
50
120
180
ns
80
120
46
70
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V_GS = 5 thru 2 V
8
6
1.5 V
4
2
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
10
8
6
4
T_C = 125_C
2
25_C
- 55_C
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V_GS - Gate-to-Source Voltage (V)
Document Number: 71814
S-20804—Rev. C, 01-Jul-02