SI7942DP Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

Si7942DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.08
1500
Capacitance
0.06
0.04
0.02
V_GS = 6 V
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
Gate Charge
10
V_DS = 50 V
I_D = 5.9 A
8
6
4
2
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
T_J = 150_C
10
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72118
S-03373—Rev. A, 03-Mar-03
1200
900
C_iss
600
300
C_oss
C_rss
0
0 10 20 30 40 50 60 70 80
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
1.8
I_D = 5.9 A
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.12
0.10
0.08
I_D = 5.9 A
I_D = 1 A
0.06
0.04
0.02
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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