SI7942DP Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

Si7942DP
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
100
r_DS(on) (W)
0.049 @ V_GS = 10 V
0.060 @ V_GS = 6 V
I_D (A)
5.9
5.5
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D Dual MOSFET for Space Savings
APPLICATIONS
D Synchronous Buck Shoot-Through Resistant
D Optimized for Primary Side Switch
PowerPAK SO-8
6.15 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
5.15 mm
S2
3
G2
4
Bottom View
Ordering Information: Si7942DP-T1
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
100
"20
5.9
3.8
4.7
3.0
20
2.9
1.2
20
20
3.5
1.4
2.2
0.9
-55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72118
S-03373—Rev. A, 03-Mar-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
26
60
2.2
Maximum
35
85
2.7
Unit
_C/W
www.vishay.com
1