SI7942DP Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

Si7942DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 80 V, V_GS = 0 V
V_DS = 80 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 5.9 A
V_GS = 6 V, I_D = 5.5 A
V_DS = 15 V, I_D = 5.9 A
I_S = 2.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS =50 V, V_GS = 10 V, I_D = 5.9 A
V_DD = 50 V, R_L = 50 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.9 A, di/dt = 100 A/ms
Min Typ Max Unit
2
4.0
V
"100
nA
1
mA
5
20
A
0.041
0.049
W
0.048
0.060
14
S
0.77
1.2
V
16
24
3.8
nC
5.5
2.2
W
15
25
15
25
35
55
ns
20
30
50
75
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
16
12
8
4
0
0
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2
Output Characteristics
V_GS = 10 thru 6 V
5V
3V
4V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Transfer Characteristics
20
16
12
8
T_C = 125_C
4
25_C
- 55_C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Document Number: 72118
S-03373—Rev. A, 03-Mar-03