SI7913DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si7913DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
2100
Capacitance
0.08
0.06
V_GS = 1.8 V
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
1800
1500
C_iss
1200
900
600
300
0
0
C_rss
4
C_oss
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
Gate Charge
5
V_DS = 10 V
4
I_D = 7.4 A
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 7.4 A
3
1.2
2
1.0
1
0.8
0
0
4
8
12
16
20
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
10
T_J = 150_C
T_J = 25_C
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 7.4 A
0.04 I_D = 1.5 A
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
www.vishay.com
3