SI7913DN Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si7913DN
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = −20 V, V_GS = 0 V
V_DS = −20 V, V_GS = 0 V, T_J = 85_C
V_DS v −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −7.4 A
V_GS = −2.5 V, I_D = −6.5 A
V_GS = −1.8 V, I_D = −1.5 A
V_DS = −6 V, I_D = −7.4 A
I_S = −2.3 A, V_GS = 0 V
−0.40
−1.0
V
"100
nA
−1
mA
−5
−20
A
0.029
0.037
0.038
0.048
W
0.051
0.066
20
S
−0.74
−1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = −10 V, V_GS = −4.5 V, I_D = −7.4 A
f = 1 MHz
V_DD = −10 V, R_L = 10 W
I_D ^ −1 A, V_GEN = −4.5 V, R_g = 6 W
I_F = −2.3 A, di/dt = 100 A/ms
15.3
24
2.0
nC
3.9
7
W
20
30
70
110
72
110
ns
150
225
25
50
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 5 thru 2.5 V
2V
16
16
Transfer Characteristics
12
12
8
1.5 V
4
0
0
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2
1V
1
2
3
4
V_DS − Drain-to-Source Voltage (V)
8
T_C = 125_C
4
25_C
−55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS − Gate-to-Source Voltage (V)
Document Number: 72615
S-51129—Rev. B, 13-Jun-05