SI7913DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si7913DN
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.037 @ V_GS = −4.5 V
−20
0.048 @ V_GS = −2.5 V
0.066 @ V_GS = −1.8 V
PowerPAK 1212-8
I_D (A)
−7.4
−6.5
−5.5
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package
APPLICATIONS
D Portable
− PA Switch
− Battery Switch
− Load Switch
S
S
RoHS
COMPLIANT
3.30 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
3.30 mm
S2
3
G2
4
Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free)
Bottom View
G
G
D
P-Channel MOSFET
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^b,c
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"8
−7.4
−5.0
−5.3
−3.6
−20
−2.3
−1.1
2.8
1.3
1.5
0.85
−55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
t v 10 sec
35
Steady State
R_thJA
75
Steady State
R_thJC
4
44
94
_C/W
5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
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