SI7902EDN Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET, Common Drain

Preliminary Information
Si7902EDN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 5 thru 2 V
24
24
2.5 V
18
18
Transfer Characteristics
12
6
0
0
0.08
2V
1.5 V
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.06
0.04 V_GS = 2.5 V
0.02
V_GS = 3.7 V
V_GS = 4.5 V
12
T_C = 125_C
6
25_C
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Gate Charge
5
V_DS = 15 V
4
I_D = 8.3 A
3
2
1
0.00
0
6
12
18
24
30
I_D – Drain Current (A)
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 4.5 V
I_D = 8.3 A
1.4
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 71801
S-05696—Rev. A, 18-Feb-02
www.vishay.com
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