SI7902EDN Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET, Common Drain

Si7902EDN
Vishay Siliconix
Preliminary Information
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "4.5 V
V_DS = 0 V, V_GS = "12 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 85_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 8.3 A
V_GS = 3.7 V, I_D = 8.0 A
V_GS = 2.5 V, I_D = 3.0 A
V_DS = 15 V, I_D = 8.3 A
I_S = 2.7 A, V_GS = 0 V
0.60
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 4.5 V, I_D = 8.3 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
Typ
0.023
0.025
0.035
26
0.75
10
2.3
2.4
0.9
1.5
2.5
2.5
Max Unit
V
"1
mA
"10
mA
1
mA
20
A
0.028
0.030
W
0.043
S
1.2
V
15
nC
1.5
2.5
ms
4.0
4.0
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
0.8
0.6
0.4
0.2
0.0
0
3
6
9
12
15
V_GS – Gate-to-Source Voltage (V)
www.vishay.com
2
1000
100
10
1
0.1
0.01
Gate Current vs. Gate-Source Voltage
T_J = 150_C
T_J = 25_C
0.001
0
3
6
9
12
15
V_GS – Gate-to-Source Voltage (V)
Document Number: 71801
S-05696—Rev. A, 18-Feb-02