SI7902EDN Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET, Common Drain

Preliminary Information
Si7902EDN
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.028 @ V_GS = 4.5 V
0.030 @ V_GS = 3.7 V
0.043 @ V_GS = 2.5 V
I_D (A)
8.3
8.0
6.7
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
D 3000-V ESD Protection
APPLICATIONS
D Protection Switch for 1-2 Li-ion/LiP Batteries
PowerPAKt 1212-8
3.30 mm
S1
1
G1
3.30 mm
2
S2
3
G2
G₁
4
D
8
D
7
D
6
D
5
Bottom View
D
1.8 kW
S₁
N-Channel
D
1.8 kW
G₂
S₂
N-Channel
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"12
8.3
5.6
6.0
4.0
40
2.7
1.3
3.2
1.5
1.7
0.79
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
This data sheet contains preliminary specifications that are subject to change.
Document Number: 71801
S-05696—Rev. A, 18-Feb-02
Symbol
R_thJA
R_thJC
Typical
30
65
1.9
Maximum
38
82
2.4
Unit
_C/W
www.vishay.com
1