SI7850DP Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) Fast Switching MOSFET

New Product
Si7850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06
1400
Capacitance
0.05
0.04
0.03
0.02
0.01
0.00
0
V_GS = 4.5 V
V_GS = 10 V
8
16
24
32
40
I_D – Drain Current (A)
1200
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
10
20
30
40
50
60
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 30 V
8
I_D = 10.3 A
6
On-Resistance vs. Junction Temperature
2.0
1.8
V_GS = 10 V
I_D = 10.3 A
1.6
1.4
4
1.2
1.0
2
0.8
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
T_J = 150_C
10
T_J = 25_C
0.04
I_D = 10.3 A
0.03
0.02
0.01
1
0.00
0.5
1.0
1.5
2.0
2.5
V_SD – Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Document Number: 71625
S-03828—Rev. A, 28-May-01
www.vishay.com
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