SI7850DP Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) Fast Switching MOSFET

Si7850DP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
V_(BR)DSS
V_GS = 0 V, I_D = 250 mA
60
V_GS(th)
V_DS = V_GS, I_D = 250 mA
1
I_GSS
V_DS = 0 V, V_GS = "20 V
I_DSS
V_DS = 60 V, V_GS = 0 V
V_DS = 60 V, V_GS = 0 V, T_J = 55_C
I_D(on)
V_DS w 5 V, V_GS = 10 V
40
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
r_DS(on)
g_fs
V_SD
V_GS = 10 V, I_D = 10.3 A
V_GS = 4.5 V, I_D = 8.7 A
V_DS = 15 V, I_D = 10.3 A
I_S = 3.8 A, V_GS = 0 V
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_G
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 30 V, V_GS = 10 V, I_D = 10.3 A
V_DD = 30 V, R_L = 30 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 3.8 A, di/dt = 100 A/ms
Typ Max Unit
V
"100
nA
1
mA
20
A
0.018
0.022
W
0.025
0.031
26
S
0.85
1.2
V
18
27
3.4
nC
5.3
1.4
W
10
20
10
20
25
50
ns
12
24
50
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 10 thru 5 V
32
32
24
24
4V
16
16
8
8
3V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
V_DS – Drain-to-Source Voltage (V)
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2
Transfer Characteristics
T_C = 150_C
25_C
–55_C
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Document Number: 71625
S-03828—Rev. A, 28-May-01